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By Hua-Tay Lin; Taejin Hwang; Soshu Kirihara; Sujanto Widjaja

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See Fig. 7(c). This indicates a fiber texture with only a preferred out-of-plane orientation but no preferred in-plane orientation. Therefore, it is crucial to have a biaxial layer to induce the epitaxial Ge film. The angular misorientation between adjacent grains and the grain boundary structure in Ge film can be obtained using high resolution TEM imaging. Figure 9(a) shows a high-resolution TEM image of such a grain boundary (red dashed line) in Ge film. Fig. 9(b) shows a grain Advanced Ceramic Coatings and Materials for Extreme Environments III • 39 Dynamic Oblique Angle Deposition of Nanostructures for Energy Applications misorientation of -2°.

Jiang, Dielectric and mechanical properties of porous Si3N4 ceramics prepared via low temperature sintering, Ceram. , 35, 1699-1703 (2009). 3 S. Q. Li, Y. C. Pei, C. Q. Yu, J. L. Li, Mechanical and dielectric properties of porous SÍ2N20-SÍ3N4 in situ composites, Ceram. , 35, 1851-54 (2009). 4 H. J. Wang, J. L. Yu, J. Zhang, D. H. Zhang, Preparation and properties of pressureless-sintered porous Si3N4, J. Mater. , 45, 3671-3676 (2010). X. M. Li, L. T. Zhang, X. W. , 66, 33-36(2012). 6 X. M. Li, X.

These buffer layers are used to grow biaxially oriented semiconductor films such as Ge and CdTe by physical vapor deposition and metalorganic chemical vapor deposition (MOCVD), respectively at a temperature below the glass melting temperature of -600 °C. Our experiments showed that the optimum growth temperature of Ge and CdTe on CaF2 buffer layer is <450 °C. For other semiconductors such as Si, one would require a temperature higher than or close to the glass melting temperature for biaxial growth.

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