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By Richard C. Alkire, Heinz Gerischer, Dieter M. Kolb, Charles W. Tobias

This sequence, previously edited by way of Heinz Gerischer and Charls V. Tobias, now edited by means of Richard C. Alkire and Dieter M. Kolb, has been warmly welcomed by means of scientists world-wide that is mirrored within the reports of the former volumes: 'This is a vital e-book for researchers in electrochemistry; it covers components of either primary and functional value, with reports of top of the range. the fabric is especially good awarded and the alternative of subject matters displays a balanced editorial coverage that's welcomed.' The Analyst 'All the contributions during this quantity are good as much as the traditional of this wonderful sequence and may be of serious price to electrochemists... The editors back should be congratulated in this fantastic choice of reviews.' magazine of Electroanalytical Chemistry and Interfacial Chemistry `...competently and obviously written.' Berichte der Bunsen- Gesellschaft für Physikalische Chemie

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Using a spinning technique, Pietsch et al. [I131 studied the very initial stages of Si(ll1) etching in buffered NH4F, after removal of the oxide layer in acidic HF. 1 s of exposure. Pits grow laterally until adatoms on top of terraces are removed; large and atomically flat terraces with large triangular pits are observed after 4 min on a perfectly oriented surface. 2"), Figure 19b shows that 3 min of etching in buffered NH4F preserves the initial stepped surface structure because Si etching occurs according to a step flow process (similar images are obtained for longer exposures) [I 121.

40 P. Allongue is evidently easiest at steps especially at kink sites where steric hindrance is minimal and surface bonds also are more flexible than on terraces (water molecules must come in close contact with Si - H bonds). Though a chemical etch rate should not display much bias variation, there is no contradiction between the nature of the reaction and the results of Fig. 26 as it is exposed in [122]. At anodic bias the rate of formation of Si - OH bonds increases and a thin oxide layer is built by condensation of Si-OH bonds which stops etching since Si02 is slightly soluble in NaOH.

79] and Carlsson et al. [82] have imaged n-GaAs(100) in NaOH by STM under potential control. Under illumination, sequences of images showed dramatic changes because the surface was dissolved with a current density as high as 150 pA cm-2, which is equivalent to the removal of 20 ML min-'. Topographic changes between two images were too fast to be analyzed. Much slower dissolution rates must be monitored (see the discussion of Si in Sec. 1). In darkness no topographic change was observed within the scale used.

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